- Departments / Centres
Contact Hours and Credits: (3 -0- 0) 3
To impart knowledge on basics of microwave electron beam devices and their applications in X band frequency.
Klystrons: Limitations of conventional vacuum tubes, Two cavity klystron - Reentrant cavities, Velocity modulation process, Bunching process ,Power output and efficiency; Multi-cavity klystron , Reflex klystron- Velocity modulation process, Bunching process, Power output and efficiency , Mode Characteristics ,Electronic admittance spiral.
Travelling-wave tubes: Slow-wave structures, Helix TWT- Amplification process, Convection current, Wave modes and gain; Coupled cavity TWT, Backward wave oscillator.
Crossed -field devices: Magnetrons- Principle of operation, characteristics, Hull cut-off condition; Carcinotron, Gyrotron.
Microwave transistors and FETs: Microwave bipolar transistors-Physical structures, characteristics, Power-frequency limitations; Microwave tunnel diode, Microwave unipolar transistor – Physical structure, principle of operation, characteristics ,High electron-mobility transistors.
Transferred electron and Avalanche transit-time devices : Gunn diode, Gunn diode as an oscillator. IMPATT, TRAPATT and BARITT.
Students are able to