Dr. Surya Teja Naga Srinivas Padala

email : suryateja@nitt.edu

Research Interests

  • Computational Nanoelectronics
  • Reliability Analysis of Nano electronic device
  • Characterization of semiconductor devices under stress
  • TCAD-Augmented Machine Learning

Education

Degree Institute Studied Department Year
Ph.D. Indian Institute of Technology Patna (IIT Patna) Electrical Engineering 2018 – 2023
M.Tech. National Institute of Technology Durgapur (NIT Durgapur) Microelectronics & VLSI, Electronics and Communication Engineering 2012 – 2014
B.Tech. Affiliated to Jawaharlal Nehru Technological University Kakinada (JNTUK) Electronics and Communication Engineering 2008 – 2012

Professional Experience

Designation Institute Timeline
Assistant Professor National Institute of Technology Tiruchirappalli (NIT Trichy), Tamilnadu 12/2025 - Present
Assistant Professor VIT Vellore 08/2023 - 12/2025
Assistant Professor Vignan Institute of Information Technology, Vizag 06/2015 - 12/2017

Google Scholar ID

ORCID ID

Scopus ID

Publications

(A) Refereed Research Journals

S. No. Author(s) Title of Paper Journal Year
19 A. Maniyar, S. Das, P.S.T.N. Srinivas, P. K. Tiwari Geometry-Driven Thermal Noise Trends in GAA Nanowire Devices Silicon 2026
18 B. V. Rao, A. Kumar, P.S.T.N. Srinivas, B. Bhowmick Dielectric Modulation-Based High-Sensitivity Biomolecular Detection Using Ge/Si Heterostructure ES Fin-TFET Biosensors: A Detailed Performance Study Sensing and Imaging 2026
17 R. Raj, S. Moparthi, A. Kumar, P. K. Tiwari, P.S.T.N. Srinivas Computational investigation of trapezoidal channel profiles in Gate-All-Around (GAA) FETs for digital performance Micro and Nanostructures 2025
16 S. Kumar, A. Kumar, P.S.T.N. Srinivas Investigation of BTBT-Triggered Split-Gate Junctionless Nanosheet FETs for Analog and RF Applications Transactions on Electrical and Electronic Materials 2025
15 A. Maniyar, P. Raj, P.S.T.N. Srinivas, A. Kumar, K. S. Chang-Liao, P. K. Tiwari Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs IEEE Transactions on Electron Devices 2024
14 T. S. Kumar, A. Hazarika, P.S.T.N. Srinivas, P. K. Tiwari, A. Kumar A machine learning approach to accelerate reliability prediction in nanowire FETs from self-heating perspective Microelectronics Reliability 2024
13 P.S.T.N. Srinivas, N. A. Kumari, A. Kumar, P. K. Tiwari, K. G. Sravani Impact of ambient temperature on CombFET for sub-5-nm technology nodes: An RF performance perspective Microsystem Technologies 2024
12 S. S. Katta, T. Kumari, P.S.T.N. Srinivas, P. K. Tiwari Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture Microelectronics Journal 2024
11 P.S.T.N. Srinivas, S. Jit, P. K. Tiwari Impact of self-heating on thermal noise in In1−xGaxAs GAA MOSFETs Microelectronics Journal 2023
10 A. Maniyar, P.S.T.N. Srinivas, P. K. Tiwari, K. S. Chang-Liao Impact of process-induced inclined sidewalls on gate-induced drain leakage (GIDL) current of nanowire GAA MOSFETs IEEE Transactions on Electron Devices 2022
9 S. Singh, P.S.T.N. Srinivas, A. Kumar, P. K. Tiwari Physical insight into self-heating induced performance degradation in RingFET Silicon 2022
8 P.S.T.N. Srinivas, A. Kumar, P. K. Tiwari Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs Semiconductor Science and Technology 2021
7 P.S.T.N. Srinivas, P. K. Tiwari Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs IEEE Transactions on Device and Materials Reliability 2021
6 V. K. Dixit, R. Gupta, P.S.T.N. Srinivas, S. Dubey Back Bias Induced Modeling of Subthreshold Characteristics of SOI Junctionless Field Effect Transistor (JLFET) Silicon 2021
5 P.S.T.N. Srinivas, A. Kumar, P. K. Tiwari Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs) Silicon 2021
4 V. K. Dixit, R. Gupta, V. Purwar, P.S.T.N. Srinivas Effect of Substrate Induced Surface Potential (SISP) on Threshold Voltage of SOI Junction-Less Field Effect Transistor (JLFET) Silicon 2021
3 D. Gola, B. Singh, P.S.T.N. Srinivas, P. K. Tiwari Thermal noise models for trigate junctionless transistors including substrate bias effects IEEE Transactions on Electron Devices 2020
2 P.S.T.N. Srinivas, A. Kumar, S. Jit, P. K. Tiwari Self-heating effects and hot carrier degradation in In0.53Ga0.47As gate-all-around MOSFETs Semiconductor Science and Technology 2020
1 A. Kumar, P.S.T.N. Srinivas, P. K. Tiwari An insight into self-heating effects and its implications on hot carrier degradation for silicon-nanotube-based double gate-all-around (DGAA) MOSFETs IEEE Journal of the Electron Devices Society 2019

(B) Conferences/Workshops/Symposia Proceedings

S. No. Author(s) Title of Abstract/ Paper Title of the Proceedings Year DOI / Link
11 Annie Catherine J, Deekschika R, Mithika Munibabu, Arun Kumar, Rajeev Pankaj Nelapati, P.S.T.N. Srinivas Investigation of RF Performance in n-JL-CombFET 2026 9th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) 2026 11434316
10 Rohan Raj, Mathew John, Sheik Afrath, S Satheesh Kumar, P.S.T.N. Srinivas, S Ravi FPGA Based Design for Efficient Functioning of Fully Automatic Washing Machine 2025 IEEE 6th India Council International Subsections Conference (INDISCON) 2025 11252039
9 A. Maniyar, P.S.T.N. Srinivas, P. K. Tiwari Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON) 2023 10322347
8 P.S.T.N. Srinivas, A. Kumar, P. K. Tiwari In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects 2022 IEEE Silchar Subsection Conference (SILCON) 2022 10028932
7 A. Kumar, P.S.T.N. Srinivas, P. K. Tiwari Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs 2019 IEEE International Symposium on Smart Electronic Systems (iSES) 2019 9002480
6 A. Kumar, P.S.T.N. Srinivas, P. K. Tiwari Compact drain current model of silicon-nanotube based double gate-all-around (DGAA) MOSFETs incorporating short channel effects 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC) 2019 9084000
5 P.S.T.N. Srinivas, A. Kumar, P. K. Tiwari Effects of Lateral Spreading in 2-Dimensional Non-Uniform Doped Junctionless FinFETs 2019 IEEE 9th International Nanoelectronics Conferences (INEC) 2019 8853855
4 A. Kumar, P.S.T.N. Srinivas, P. K. Tiwari Physical insight into self-heating effects in ultrathin junctionless gate-all-around FETs 2019 IEEE 9th International Nanoelectronics Conferences (INEC) 2019 8853852
3 A. Kumar, P.S.T.N. Srinivas, P. K. Tiwari Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs) 2019 Devices for Integrated Circuit (DevIC) 2019 8783617
2 P.S.T.N. Srinivas, V. K. Pulluri, C. Kumar, A. K. Mal Implementation of 32 nm FinFET voltage controlled oscillator International Conference for Convergence for Technology-2014 2014 7092337
1 P. Dhilleswararao, R. Mahapatra, P.S.T.N. Srinivas High SNM 32nm CNFET based 6T SRAM Cell design considering transistor ratio 2014 International Conference on Electronics and Communication Systems (ICECS) 2014 6892748

Contact Address

Dr. Surya Teja Naga Srinivas Padala
Assistant Professor
Room No. 315
Department of Electronics and Communication Engineering,
NIT Tiruchirappalli - 620015
Email: suryateja@nitt.edu