EC808

Low Power VLSI Circuits 3 - 0 - 0 - 3

COURSE OBJECTIVES

  • To expose the students to the low voltage device modeling, low voltage, low power VLSI CMOS circuit design.

 

COURSE CONTENT

Evolution of CMOS technology.0.25 µm and 0.1 µm technologies. Shallow trench isolation. Lightly-doped drain. Buried channel. BiCMOS and SOI CMOS technologies. Second order effects and capacitance of MOS devices.

CMOS inverters, static logic circuits of CMOS, pass transistor, BiCMOS, SOI CMOS and low power CMOS techniques.

Basic  concepts  of  dynamic  logic  circuits.  Various  problems  associated  with  dynamic  logic  circuits. Differential, BiCMOS and low voltage dynamic logic circuits.

Different types of memory circuits.

Adder circuits, Multipliers and advanced structures – PLA, PLL,DLL and Processing unit.

 

Text Books

1.   J.Rabaey, “Low Power Design Essentials (Integrated Circuits and Systems)”, Springer, 2009

2.   J.B.Kuo&J.H.Lou, “Low-voltage CMOS VLSI Circuits”, Wiley, 1999.

 

Reference Books

1.    A.Bellaowar & M.I.Elmasry,”Low power Digital VLSI Design, Circuits and Systems”, Kluwer, 1996.

 

COURSE OUTCOMES

Students are able to

CO1: acquire the knowledge about various CMOS fabrication process and its modeling.

CO2: infer about the second order effects of MOS transistor characteristics.

CO3: analyze and implement various CMOS static logic circuits.

CO4: learn the design of various CMOS dynamic logic circuits.

CO5: learn the design techniques low voltage and low power CMOS circuits for various applications.

CO6: learn the different types of memory circuits and their design.

        CO7: design and implementation of various structures for low power applications