Publications

1. AlN codoping and fabrication of ZnO homojunction by RF sputtering
L. Balakrishnan, P.Premchander, T. Balasubramanian, N. Gopalakrishnan
Vacuum 85 (2011) 881-886.

2. Influence of grain size on the properties of AlN doped ZnO thin film
K.P. Bhuvana, J. Elanchezhiyan, N. Gopalakrishnan, T. Balasubramanian
Materials Science in Semiconductor Processing 14 (2011) 84-88.

3. Characterization of (ZnO)1-x(AlN)x/ZnO junction for optoelectronic applications
N. Gopalakrishnan, L. Balakrishnan, V. Senthamizh Pavai, J. Elanchezhiyan,
T. Balasubramanian
Current Applied Physics 11 (2011) 834-837

4. Vacancy mediated room temperature ferromagnetism in Zn1-xMnxO thin films
N. Gopalakrishnan, L. Balakrishnan, B. Srimathy, M. Senthil Kumar and
T. Balasubramanian
Physics Status Solidi A 207 (2010) 2180–2184.

5. Nucleation and characterization of Zn1-xMnxO thin films deposited on different
substrates
N.Gopalakrishnan, J.Elanchezhiyan, K.P.Bhuvana and T.Balasubramanian
Physica B: Condensed Matter 404 (2009) 1563-1567.

6. Investigations of the properties of Zn1−xCrxO thin films grown by RF magnetron sputtering
J.Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan, B.C. Shin, W.J. Lee,
T.Balasubramanian
Journal of Alloys and Compounds 478 (2009) 45-48.

7. A novel approach for codoping in ZnO by AlN
K.P. Bhuvana, J. Elanchezhiyan, N. Gopalakrishnan, B.C. Shin, W.J. Lee, T. Balasubramanian
Vacuum 83 (2009) 1081-1085.

8. Realization of p-type conduction in (ZnO)1-x(AlN)x thin films grown by RF magnetron sputtering
K. P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian
Journal of Alloys and Compounds 478 (2009) 54-58.

9. Realization of room temperature ferromagnetism in Zn1−xCrxO thin films grown by RF magnetron sputtering
J.Elanchezhiyan, K.P. Bhuvana, N. Gopalakrishnan, Yong Chang, S.Sivananthan, M. Senthil Kumar and T. Balasubramanian
Journal of Alloys and Compounds 468 (2009) 7–10
10.. Optimization of Zn1-xAlxO film for antireflection coating by R.F. sputtering
K. P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian
J. of Alloys and Compounds 473(2009) 534-537.

11. Codoped (AlN) and monodoped (Al) ZnO thin films grown by R.F. Sputtering; A comparative study
K. P. Bhuvana J. Elanchezhiyan, N. Gopalakrishnan and T. Balasubramanian
Applied Surface Science 255 (2008) 2026–2029

12. On the nucleation and growth of Zn1-xMnxO thin films grown by RF magnetron sputtering
N.Gopalakrishnan, J.Elanchezhiyan, K.P.Bhuvana and T.Balasubramanian
Scripta Materialia. 58 (2008) 930-933

13. Fabrication of GaN doped ZnO nanocrystallines by Laser ablation
N.Gopalakrishnan, B.C.Shin, K.P.Bhuvana, J.Elanchezhiyan and
T.Balasubramanian
J. of Nanoscience and Nanotechnology 8 (2008) 4168-4171.

14. Improvement of stoichiometry in (ZnO)1-x(GaN)x thin films grown by Laser ablation
N.Gopalakrishnan, B.C.Shin, K.P.Bhuvana, J.Elanchezhiyan and
T.Balasubramanian
J. of Alloys and Compounds 465 (2008) 502-505.

15. Effect of doping concentration on Zn1-xMnxO thin films grown by RF magnetron
sputtering
J.Elanchezhiyan, K.P.Bhuvana, N.Gopalakrishnan and T.Balasubramanian
Z.Naturforsch 63 a (2008) 585-590.

16. Investigation on Mn doped ZnO epitaxial films grown by RF magnetron sputtering
J. Elanchezhiyan, K. P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian
Materials Letters 62 (2008) 3379-3381.

17. Substrates effect on Zn1-xMnxO thin films grown by RF magnetron sputtering
J. Elanchezhiyan, K. P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian
J. of Alloys and Compounds 463(2008) 84-88.

18. Influence of post-deposition annealing on the structural and optical properties of ZnO thin films prepared by sol–gel and spin-coating method.
G. Srinivasan, N. Gopalakrishnan, Y.S. Yu, R. Kesavamoorthy and J. Kumar
Superlattices and Microstructures 43(2008) 112-119.

19. ZnO based diluted magnetic semiconductor thin films by RF magnetron sputtering for spin photonic devices
J. Elanchezhiyan, K. P. Bhuvana, N. Gopalakrishnan and T. Balasubramanian
Proc. SPIE. 6674 (2007) 66740C-66746C.

20. Development of NLO tunable band gap organic devices for optoelectronic applications
B. K. Periyasamy, Robinson S. Jebas, N. Gopalakrishnan, T.Balasubramanian
Materials Letters 61(2007)4246-4249.

21. An attempt on triple doping in ZnO by pulsed laser deposition
N.Gopalakrishnan, B.C.Shin, and T.Balasubramanian
Materials Letters 61 (2007) 4420-4422.

22. A novel approach for development of co-doped ZnO semiconductor film by
pulsed laser deposition and R.F.Sputterring.
N.Gopalakrishnan, B.C.Shin, K.P.Bhuvana, J.Elanchezhiyan and T.Balasubramanian.
Proceeding of 5th International conference on ‘Trends in Industrial measurements and Automation -TIMA-2007’ Jan.2007,NIT, Tiruchirapalli, India. pp.97-101.

23. Effect of GaN doping on ZnO films by pulsed laser deposition
N.Gopalakrishnan, B.C.Shin, H.S.Lim, T.Balasubramanian and Y.S.Yu
Materials Letters 61 (2007)2307-2310.

24. Codoping in ZnO using GaN by pulsed laser deposition
N.Gopalakrishnan, B.C.Shin, H.S.Lim, T.Balasubramanian and Y.S.Yu
Journal of Crystal Growth 294(2006)273-277.

25. Comparison of ZnO:GaN films on Si(111) and Si(100) substrates by pulsed
laser deposition
N.Gopalakrishnan, B.C.Shin, H.S.Lim, G.Y.Kim and Y.S.Yu.
Physica B 376-377 (2006) 756-759.

26. ZnO films grown by Pulsed laser deposition
N.Gopalakrishnan, B.C.Shin, H.S.Lim, G. Y. Kim, J. Kumar, T.Balasubramanian and Y.S.Yu
Proceedings of the International workshop on Crystal Growth and
Characterization of Advanced Materials, Anna University, Chennai, Jan. 2006,
pp.336-344.

27. Effect of low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE.
N.Gopalakrishnan, K.Baskar, H.Kawanami and I.Sakata
Journal of Crystal Growth 250(1-2)(2003)29-33.

28. Rapid epitaxial growth of conducting and insulating III-V compounds on (001),
(110), (111)A, (311)A and (311)B surfaces by HVPE.
S.Lourdudoss, N.Gopalakrishnan, H.Holtz, M.Deschler and R.Beccard
Metallurgical and Materials Transactions A, 30A(1999)1047-1051

29. Self consistent model for InP selective regrowth by Hydride Vapour Phase epitaxy. N.Gopalakrishnan, E.R.Messmer and S.Lourdudoss Japanese Journal of Applied Physics, 38 (1999) 1037-1039

30. Investigations on the nucleation kinetics of L-Arginen Phosphate single crystals.
P.Mohankumar, N.Gopalakrishnan, R.Jayavel and P.Ramasamy
Crystal Research Technology 34(1999)1265-1268.